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       CDBQR0230R Page 1 QW-A1117 REV:C A mA V V 1 200 30 35 IO VR VRRM IFSM 8.3ms single half sine-wave superimposed on rate load(JEDEC method) O C O C +125 +125 -40 TSTG Tj Storage temperature Junction temperature Average forward current Reverse voltage Repetitive peak reverse voltage Forward current,surge peak Parameter Conditions Symbol Min Typ Max Unit uA V 1 0.6 IR VF Reverse current Forward voltage Parameter Conditions Symbol Min Typ Max Unit VR = 1 0 V IF = 2 00 mA 5 O C unless otherwise noted) Maximum Rating (at TA=2 5 O C unless otherwise noted) Electrical Characteristics (at TA=2 Features - Low reverse current. - Designed for mounting on small surface. - Extremely thin / leadless package. - Majority carrier conduction. Mechanical data - Case: 0402/SOD-923F standard package, m olded plastic. - Terminals: Gold plated, solderable per M IL-STD-750,method 2026. - Marking code: cathode band & BB - Mounting position: Any. - Weight: 0.001 gram(approx.). Comchip Technology CO., LTD. mW 125 PD Power Dissipation 0.041(1.05) 0.037(0.95) 0.026(0.65) 0.022(0.55) Dimensions in inches and (millimeter) 0.020(0.50) Typ. 0.022(0.55) 0.018(0.45) 0.012(0.30) Typ. SMD Schottky Barrier Diode 0402/SOD-923F Io = 2 00 mA VR = 3 0 Volts RoHS Device |